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| Home > Institute Collections > IEK > IEK-2 > Investigation of resistive switching in barium strontium titanate thin films for memory applications |
| Home > Institute Collections > IEK > IEK-2 > Investigation of resistive switching in barium strontium titanate thin films for memory applications |
| Book | PreJuSER-136188 |
2010
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
ISBN: 978-3-89336-608-8
Please use a persistent id in citations: http://hdl.handle.net/2128/3706
Abstract: Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO$_{3}$ (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10$^{4}$ times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO$_{x}$ layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the observation of unipolar switching behavior. The absence of unipolar switching in single crystalline samples may relate to space charge depletion layers at grain boundaries and their impact on the electronic conduction properties as well as the different local heat transfer in thin films. By controlling the switching voltage, the bipolar and unipolar resistive switching can be alternated in polycrystalline BST thin films. The bipolar/unipolar alternation is dynamically repeatable and the alternation may relate to the local modification of broken filaments by breakdown or oxygen vacancy movement.
Keyword(s): RRAM (Resistive Random Access Memory) ; thin film technology ; strontium ; barium ; titanate ; nanoimprint lithography ; resistive switching
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